4362, Elektronika, Laptopy

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Si4362DY
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
TrenchFET
Power MOSFET
PRODUCT SUMMARY
Optimized for “Low Side” Synchronous
Rectifier Operation
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
100% R
G
Tested
APPLICATIONS
0.0045 @ V
GS
= 10 V
20
30
30
0.0055 @ V
GS
= 4.5 V
19
DC/DC Converters
Synchronous Rectifiers
D
SO-8
S
D
1
8
S
D
2
3
7
G
S
D
6
G
D
4
5
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
V
Gate-Source Voltage
V
GS
12
T
A
= 25
C
20
13
C)
a
C)
a
Continuous Drain Current
(T
J
= 150
Continuous Drain Current
(T
J
= 150
I
D
I
D
T
A
= 70
C
15
10
A
A
Pulsed Drain Current (10
s Pulse Width)
I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.3
T
A
= 25
C
3.5
1.6
Maximum Power Dissipation
a
Maximum Power Dissipation
a
P
D
P
D
W
W
2.2
1
T
A
= 70
C
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
29
35
Maximum Junction-to-Ambient
a
a
Mi
J i
tAbi
R
R
thJA
Steady State
67
80
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71628
S-03662—Rev. D, 14-Apr-03
www.vishay.com
2-1
 Si4362DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.6
V
V
DS
= 0 V, V
GS
=
12 V
Gate-Body Leakage
I
GSS
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
I
DSS
I
DSS
A
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
C
5
5 V, V
GS
= 10
V
On-State Drain Current
a
I
D(on)
V
DS
30
A
V
GS
= 10
V, I
D
= 20 A
0.0035
0.0045
Drain-Source On-State Resistance
a
Drain-Source On-State Resistance
a
r
DS(on)
r
DS(on)
V
GS
= 4.5 V, I
D
= 19 A
0.0042
0.0055
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
90
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
42
55
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 20 A
12.8
nC
Gate-Drain Charge
Q
gd
7.7
Gate Resistance
R
G
0.5
1.3
2.2
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
14
25
V
DD
= 15 V, R
L
= 15
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
G
= 6
Turn-Off Delay Time
t
d(off)
158
230
ns
Fall Time
t
f
43
65
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/
s
50
80
Notes
a.
Pulse test; pulse width
300
s, duty cycle
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
V
GS
= 10 thru 3 V
50
50
40
40
30
30
20
20
T
C
= 125
C
2 V
10
10
25
C
-55
C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71628
S-03662—Rev. D, 14-Apr-03
www.vishay.com
2-2
 Si4362DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
8000
0.008
C
iss
6000
0.006
V
GS
= 4.5 V
4000
0.004
V
GS
= 10 V
2000
0.002
C
oss
C
rss
0.000
0
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
1.6
V
DS
= 15 V
I
D
= 20 A
V
GS
= 10 V
I
D
= 20 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0.6
0
10
20
30
40
50
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
C)
Q
g
- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.025
50
0.020
T
J
= 150
C
10
0.015
0.010
T
J
= 25
C
I
D
= 20 A
0.005
1
0.000
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71628
S-03662—Rev. D, 14-Apr-03
www.vishay.com
2-3
 Si4362DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
I
D
= 250
A
50
0.2
- 0.0
40
- 0.2
30
- 0.4
20
10
- 0.6
- 0.8
0
- 50
- 25
0
25
50
75
100
125
150
10
-2
10
-1
1
10
100
600
T
J
- Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
1
t
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67
C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
Single Pulse
4. Surface Mounted
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71628
S-03662—Rev. D, 14-Apr-03
www.vishay.com
2-4
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