4n25 2, OPTOELEMENTY

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SEMICONDUCTOR TECHNICAL DATA
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by 4N25/D
GlobalOptoisolator
]
[CTR = 20% Min]
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
•
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
•
Meets or Exceeds All JEDEC Registered Specifications
•
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
[CTR = 10% Min]
*Motorola Preferred Devices
General Purpose Switching Circuits
STYLE 1 PLASTIC
•
Interfacing and coupling systems of different potentials and impedances
•
I/O Interfacing
•
Solid State Relays
6
1
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
STANDARD THRU HOLE
CASE 730A–04
INPUT LED
Reverse Voltage
V
R
3
Volts
Forward Current — Continuous
I
F
60
mA
SCHEMATIC
LED Power Dissipation @ T
A
= 25
°
C
with Negligible Power in Output Detector
Derate above 25
°
C
P
D
120
mW
1.41
mW/
°
C
1
6
OUTPUT TRANSISTOR
Collector–Emitter Voltage
2
5
4
V
CEO
30
Volts
3
Emitter–Collector Voltage
V
ECO
7
Volts
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
Collector–Base Voltage
V
CBO
70
Volts
Collector Current — Continuous
I
C
150
mA
Detector Power Dissipation @ T
A
= 25
°
C
with Negligible Power in Input LED
Derate above 25
°
C
P
D
150
mW
1.76
mW/
°
C
TOTAL DEVICE
Isolation Surge Voltage
(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500
Vac(pk)
Total Device Power Dissipation @ T
A
= 25
°
C
P
D
250
2.94
mW
mW/
Derate above 25
°
C
°
C
Ambient Operating Temperature Range
(2)
T
A
– 55 to +100
°
C
Storage Temperature Range
(2)
T
stg
– 55 to +150
°
C
Soldering Temperature (10 sec, 1/16
,
from case)
T
L
260
°
C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 5
W
Motorola Optoelectronics Device Data
1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise no
t
ed)
(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
Forward Voltage (I
F
= 10 mA)
T
A
= 25
°
C
T
A
= –55
°
C
T
A
= 100
°
C
V
F
—
—
—
1.15
1.3
1.05
1.5
—
—
Volts
Reverse Leakage Current (V
R
= 3 V)
I
R
—
—
100
m
A
Capacitance (V = 0 V, f = 1 MHz)
C
J
—
18
—
pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
4N25,25A,26,27
I
CEO
—
—
1
1
50
100
nA
(V
CE
= 10 V, T
A
= 25
°
C
4N28
(V
CE
= 10 V, T
A
= 100
°
C)
All Devices
I
CEO
—
1
—
m
A
Collector–Base Dark Current (V
CB
= 10 V)
I
CBO
—
0.2
—
nA
Collector–Emitter Breakdown Voltage (I
C
= 1 mA)
V
(BR)CEO
30
45
—
Volts
Collector–Base Breakdown Voltage (I
C
= 100
A)
V
(BR)CBO
70
100
—
Volts
Emitter–Collector Breakdown Voltage (I
E
= 100
m
A)
V
(BR)ECO
7
7.8
—
Volts
DC Current Gain (I
C
= 2 mA, V
CE
= 5 V)
h
FE
—
500
—
—
Collector–Emitter Capacitance (f = 1 MHz, V
CE
= 0)
C
CE
—
7
—
pF
Collector–Base Capacitance (f = 1 MHz, V
CB
= 0)
C
CB
—
19
—
pF
Emitter–Base Capacitance (f = 1 MHz, V
EB
= 0)
C
EB
—
9
—
pF
COUPLED
Output Collector Current (I
F
= 10 mA, V
CE
= 10 V)
I
C
(CTR)
(2)
mA (%)
4N25,25A,26
4N27,28
2 (20)
1 (10)
7 (70)
5 (50)
—
—
Collector–Emitter Saturation Voltage (I
C
= 2 mA, I
F
= 50 mA)
V
CE(sat)
—
0.15
0.5
Volts
Turn–On Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
W
)
(3)
t
on
—
2.8
—
m
s
Turn–Off Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
W
)
(3)
t
off
—
4.5
—
m
s
Rise Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
W
)
(3)
t
r
—
1.2
—
m
s
Fall Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100
W
)
(3)
t
f
—
1.3
—
m
s
Isolation Voltage (f = 60 Hz, t = 1 sec)
(4)
V
ISO
7500
—
—
Vac(pk)
Isolation Resistance (V = 500 V)
(4)
R
ISO
10
11
—
—
W
Isolation Capacitance (V = 0 V, f = 1 MHz)
(4)
C
ISO
—
0.2
—
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Motorola Optoelectronics Device Data
m
TYPICAL CHARACTERISTICS
2
10
PULSE ONLY
PULSE OR DC
NORMALIZED TO:
I
F
= 10 mA
1.8
1
1.6
1.4
T
A
= –55
°
C
0.1
1.2
25
°
C
1
100
°
C
1
10
100
1000
0.01
0.5
1
2
5
10
20
50
I
F
, LED FORWARD CURRENT (mA)
I
F
, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
28
10
7
5
24
I
F
= 10 mA
NORMALIZED TO T
A
= 25
°
C
20
2
16
5 mA
1
0.7
0.5
12
8
4
2 mA
1 mA
0.2
0
0
1
2
3
4
5
6
7
8
9
10
0.1
–60 –40 –20
0
20 40 60
80 100
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 3. Collector Current versus
Collector–Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
100
NORMALIZED TO:
V
CE
= 10 V
T
A
= 25
50
V
CC
= 10 V
100
°
C
20
{
10
10
R
L
= 1000
t
f
V
CE
= 30 V
{
5
R
L
= 100
t
r
1
t
f
2
10 V
t
r
0.1
1
0.1 0.2
0
20
40
60
80
100
0.5
1
2
5
10 20
50 100
T
A
, AMBIENT TEMPERATURE (
°
C)
I
F
, LED INPUT CURRENT (mA)
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Rise and Fall Times
(Typical Values)
Motorola Optoelectronics Device Data
3
100
70
50
V
CC
= 10 V
100
70
50
V
CC
= 10 V
20
R
L
= 1000
20
R
L
= 1000
10
7
5
100
10
7
5
100
10
10
2
2
1
0.1 0.2
0.5 0.7 1
2
5 7 10 20
50 70 100
1
0.1 0.2
0.5 0.7 1
2
5 7 10 20
50 70 100
I
F
, LED INPUT CURRENT (mA)
I
F
, LED INPUT CURRENT (mA)
Figure 7. Turn–On Switching Times
(Typical Values)
Figure 8. Turn–Off Switching Times
(Typical Values)
4
20
18
16
14
12
10
8
I
F
= 0
I
B
= 7
m
A
C
LED
f = 1 MHz
6
m
A
3
C
CB
5
m
A
2
4
m
A
C
EB
3
m
A
6
C
CE
1
2
m
A
4
2
0
1
m
A
0
2
4
6
8
10
12 14
16
18 20
0.05 0.1
0.2
0.5
1
2
5
10
20
50
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only)
Figure 10. Capacitances versus Voltage
TEST CIRCUIT
WAVEFORMS
V
CC
= 10 V
INPUT PULSE
I
F
= 10 mA
R
L
= 100
W
10%
INPUT
OUTPUT
90%
OUTPUT PULSE
t
r
t
f
t
off
t
on
Figure 11. Switching Time Test Circuit and Waveforms
4
Motorola Optoelectronics Device Data
PACKAGE DIMENSIONS
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B–
1
3
INCHES
MILLIMETERS
C
DIM MIN
MAX
MIN
MAX
F
4 PL
N
L
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
–T–
F
0.010 0.014
0.25
0.36
K
G
0.100 BSC
2.54 BSC
SEATING
PLANE
J
0.008 0.012
0.21
0.30
G
J
6 PL
K
0.100 0.150
2.54
3.81
L
0.300 BSC
7.62 BSC
0.13 (0.005)
M
T
B
M
A
M
E
6 PL
M
M
0
15
0
15
N
0.015 0.100
0.38
2.54
D
6 PL
0.13 (0.005)
M
T
A
M
B
M
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
CASE 730A–04
ISSUE G
–A–
6
4
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
3
INCHES
MILLIMETERS
F
4 PL
L
DIM MIN
MAX
MIN
MAX
H
A
0.320 0.350
8.13
8.89
B
0.240 0.260
6.10
6.60
C
0.115 0.200
2.93
5.08
C
D
0.016 0.020
0.41
0.50
E
0.040 0.070
1.02
1.77
–T–
F
0.010 0.014
0.25
0.36
G
J
SEATING
PLANE
G
0.100 BSC
2.54 BSC
H
0.020 0.025
0.51
0.63
K
E
6 PL
6 PL
J
0.008 0.012
0.20
0.30
K
0.006 0.035
0.16
0.88
D
6 PL
0.13 (0.005)
M
T
B
M
A
M
L
0.320 BSC
8.13 BSC
0.13 (0.005)
T
A
B
M
S
0.332 0.390
8.43
9.90
M
M
CASE 730C–04
ISSUE D
*Consult factory for leadform
option availability
Motorola Optoelectronics Device Data
5
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