4n25 37, OPTOELEMENTY

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GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual
in-line package.
FEATURES
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
-Add option V for white package (e.g., 4N25V-M)
-Add option 300 for black package (e.g., 4N25.300)
• Also available in white package by specifying -M suffix, eg. 4N25-M
except H11A2, H11A4 and H11A5
SCHEMATIC
1
6
2
5
3
NC
4
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
WHITE PACKAGE (-M SUFFIX)
BLACK PACKAGE (NO -M SUFFIX)
6
6
1
6
1
6
1
1
6
6
1
1
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Units
TOTAL DEVICE
T
STG
-55 to +150
°C
Storage Temperature
Operating Temperature
T
OPR
-55 to +100
°C
Lead Solder Temperature
T
SOL
260 for 10 sec
°C
Total Device Power Dissipation @ T
A
= 25°C
P
D
250
mW
Derate above 25°C
3.3 (non-M), 2.94 (-M)
EMITTER
I
F
100 (non-M), 60 (-M)
mA
DC/Average Forward Input Current
Reverse Input Voltage
V
R
6
V
Forward Current - Peak (300µs, 2% Duty Cycle)
I
F
(pk)
3
A
LED Power Dissipation @ T
A
= 25°C
P
D
150 (non-M), 120 (-M)
mW
Derate above 25°C
2.0 (non-M), 1.41 (-M)
mW/°C
DETECTOR
V
CEO
30
V
Collector-Emitter Voltage
Collector-Base Voltage
V
CBO
70
V
Emitter-Collector Voltage
V
ECO
7
V
Detector Power Dissipation @ T
A
= 25°C
P
D
150
mW
Derate above 25°C
2.0 (non-M), 1.76 (-M)
mW/°C
2001 Fairchild Semiconductor Corporation
DS300197
7/25/01
1 OF 12
www.fairchildsemi.com
 GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ**
Max
Unit
EMITTER
(I
F
= 10 mA)
V
F
1.18
1.50
V
Input Forward Voltage
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
0.001
10
µA
DETECTOR
(I
C
= 1.0 mA, I
F
= 0)
BV
CEO
30
100
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(I
C
= 100 µA, I
F
= 0)
BV
CBO
70
120
V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
F
= 0)
BV
ECO
7
10
V
Collector-Emitter Dark Current
(V
CE
= 10 V, I
F
= 0)
I
CEO
1
50
nA
Collector-Base Dark Current
(V
CB
= 10 V)
I
CBO
20
nA
Capacitance
(V
CE
= 0 V, f = 1 MHz)
C
CE
8
pF
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions Symbol
Min
Typ**
Max
Units
Input-Output Isolation Voltage
(Non-’M’, Black Package) (f = 60 Hz, t = 1 min)
V
ISO
5300
Vac(rms)*
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
7500
Vac(pk)
Isolation Resistance
(V
I-O
= 500 VDC)
R
ISO
10
11
1
Isolation Capacitance
(V
I-O
= , f = 1 MHz)
C
ISO
0.5
pF
(‘-M’ White Package)
0.2
2
pF
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25°C
www.fairchildsemi.com
2 OF 12
7/25/01 DS300197
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol Device
Min
Typ**
Max
Unit
4N35
4N36
100
4N37
H11A1
50
H11A5
30
(I
F
= 10 mA, V
CE
= 10 V)
4N25
4N26
20
H11A2
Current Transfer Ratio,
H11A3
Collector to Emitter
CTR
%
4N27
4N28
10
H11A4
4N35
(I
F
= 10 mA, V
CE
= 10 V, T
A
= -55°C)
4N36
40
4N37
4N35
(I
F
= 10 mA, V
CE
= 10 V, T
A
= +100°C)
4N36
40
4N37
4N25
(I
C
= 2 mA, I
F
= 50 mA)
4N26
0.5
4N27
4N28
4N35
Collector-Emitter
V
CE (SAT)
4N36
0.3
V
Saturation Voltage
4N37
(I
C
= 0.5 mA, I
F
= 10 mA)
H11A1
H11A2
H11A3
0.4
H11A4
H11A5
AC Characteristic
4N25
4N26
4N27
Non-Saturated
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 1001)
4N28
T
ON
H11A1
2
µs
Turn-on Time
(Fig.20)
H11A2
H11A3
H11A4
H11A5
** Typical values at T
A
= 25°C
DS300197
7/25/01
3 OF 12
www.fairchildsemi.com
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
TRANSFER CHARACTERISTICS (Cont.)
AC Characteristic
Test Conditions
Symbol Device
Min
Typ**
Max
Unit
Non Saturated
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 1001)
4N35
Turn-on Time
T
ON
4N36
2
10
µs
(Fig.20)
4N37
4N25
4N26
4N27
(I
F
= 10 mA, V
CC
= 10 V, R
L
= 1001)
4N28
T
OFF
H11A1
2
µs
(Fig.20)
H11A2
H11A3
H11A4
H11A5
Turn-off Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 1001)
4N35
4N36
2
10
(Fig.20)
4N37
** Typical values at T
A
= 25°C
www.fairchildsemi.com
4 OF 12
7/25/01 DS300197
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
(Black Package)
Fig. 2 LED Forward Voltage vs. Forward Current
(White Package)
1.8
1.8
1.7
1.7
1.6
1.6
1.5
1.5
1.4
1.4
T
A
= 55˚C
T
A
= 55˚C
1.3
1.3
T
A
= 25˚C
1.2
T
A
= 25˚C
1.2
1.1
T
A
= 100˚C
1.1
T
A
= 100˚C
1.0
1.0
1
10
100
1
10
100
I
F
- LED FORWARD CURRENT (mA)
I
F
- LED FORWARD CURRENT (mA)
Fig.3 Normalized CTR vs. Forward Current
(Black Package)
Fig.4 Normalized CTR vs. Forward Current
(White Package)
1.4
1.6
V
CE
= 5.0V
T
A
= 25˚C
Normalized to
I
F
= 10 mA
V
CE
= 5.0V
T
A
= 25˚C
Normalized to
I
F
= 10 mA
1.2
1.4
1.0
1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 5 Normalized CTR vs. Ambient Temperature
(Black Package)
Fig. 6 Normalized CTR vs. Ambient Temperature
(White Package)
1.6
1.4
1.4
I
F
= 5 mA
1.2
I
F
= 5 mA
1.2
1.0
I
F
= 10 mA
I
F
= 10 mA
1.0
0.8
0.8
0.6
I
F
= 20 mA
0.6
Normalized to
I
F
= 10 mA
T
A
= 25˚C
0.4
Normalized to
I
F
= 10 mA
T
A
= 25˚C
I
F
= 20 mA
0.4
0.2
-75
-50
-25
0
25
50
75
100
125
-60
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (˚C)
TA - AMBIENT TEMPERATURE (˚C)
DS300197
7/25/01
5 OF 12
www.fairchildsemi.com
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